EDN

Toshiba cuts capacitor from DRAM cell design

TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
New Electronics

Imec demonstrates capacitor-less IGZO-based DRAM cell

imec, the research and innovation hub in nanoelectronics, has presented a dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors ...
Semiconductor Engineering

Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
Electronic Design

Scaling The 1T DRAM Cell

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
EDN

Micron unveils improved DRAM memory cell

HONOLULU — Micron Technology Inc. unveiled a DRAM architecture that combines a new capacitor with the 6F cell design the company first introduced in 2003. Speaking at the 2004 Symposium on VLSI ...
Electronics Weekly

IGZO-based DRAM cell reduces refresh rate and power consumption

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...
sciencex

Imec Demonstrates Capacitor-less IGZO-Based DRAM Cell With >400s Retention Time

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
Electronics Weekly

IGZO-based DRAM cell reduces refresh rate and power consumption

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 ...