With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of ...

SANTA CLARA, Calif., May 05, 2021 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today announced materials engineering solutions that give its memory customers three new ways to further scale DRAM and ...

Will directed self-assembly (DSA) join Extreme Ultraviolet (EUV) Lithography and next-generation multi-patterning techniques to pattern the next memory and logic technologies? Appealing to the wisdom ...

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...

TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...

To push access times toward those of SRAM while achieving much higher densities, embedded DRAM needs a structure that differs from both commodity DRAM and conventional embedded DRAM. The challenge is ...

Since its introduction, DRAM technology has been a commodity product driven by cost and razor-thin profits. DRAM's achievement over the years is extraordinary; its capacity in 1970 was 1 Kb and today ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

Information on a supposed DRAM breakthrough has been running hot across the wires, but the press release from Semiconductor Research Corporation (SRC) that's sparked techie interest across the ...