BOISE, Idaho, Nov. 01, 2022 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone ...

SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...

However, there have been hints Intel may insert high-NA earlier into its 18A node, which is ramping up today. There's a ...

Karlsruhe, Germany – 14ACMOS, a new, EU-funded development project for the next semiconductor technology node, is expected to enable the production of chip structures with dimensions down to 14 ...

A new process design kit (PDK) from imec aims to provide broad access to a 2-nm gate-all-around (GAA) process node and associated backside connectivity for design pathfinding, system research, and ...

Researchers present 3 DICE IFF designs with transistor interleaving, the CnRx construct, and the guard gate technique at the 22 nm FD SOI technology node. April 25th, 2022 - By: Technical Paper Link ...

While all eyes tend to focus on the leading-edge silicon nodes, many mature nodes continue to enjoy robust manufacturing demand. Successive nodes stopped reducing die cost at around the 20nm node. “In ...

In 1965, Gordon Moore, a co-founder of Intel, observed that the number of transistors per square inch on integrated circuits has doubled approximately every two years since the IC was invented. This ...